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M200D GRM033 73D19 ISL65 5257B 38001 LV5114 74HC573A
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  abs1 thru abs10 mini silicon surface mount bridge rectifier reverse voltage - 100 to 1000 volts forward current - 1.0 ampere ideal for printed circuit board reliable low cost construction technique high temperature soldering guaranteed : 260 / 10 seconds / 0.375? ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension f e a tures mechanical d a t a maxi mum r a tin g s and e l ect r i cal charact eri s tic s ratings at 25 c ambient temperature unless otherwise specified. s ingle phas e half-wav e 60hz,re s i sti v e o r inducti v e load,fo r c apac i t i v e load c u rrent der a t e b y 20%. epoxy : device has ul flammability classification 94v-0 dimensions in inches and (millimeters) abs 1 2 3 4 characteri s t i c s y m bol p eak repet i t i v e revers e v o l t age w o rki ng p e a k revers e v o l t age dc b l ock i ng v o l t age v rrm v r w m v r 100 200 400 600 800 1000 v r m s revers e v o l t age v r ( r m s ) 7 0 140 280 420 560 700 v a v erage rec t i f i ed o u t put current i o 0 . 8 a non-repet i t i v e p eak forw ard s urge current 8 . 3 m s s i ngl e hal f s i ne-w ave s uperi m posed on r a t ed l oad ( j e d e c m e t hod) i f s m 3 0 a i 2 t rat i n g for f u s i n g ( t < 8 . 3 m s ) i 2 t 2 s f orward v o l t age per e l e m e n t @ i f = 0 . 4 a v f m v p eak r e v e r s e c u rrent @ t a = 25 c a t rat e d dc b l ock i ng v o l t age @ t a = 125 c i r m 10 150 a t y p i c a l j u n c t i on capac i t anc e per l eg (not e 2 ) c j 2 5 p f t y p i c a l ther m a l res i s t a n c e per l eg (not e 1 ) r ja r jl 62.5 2 5 c / w operat i ng and s t orage t e m perat ure range t j , t s t g -55 to +150 c not e : 1 . on aluminum suvstrate p.c.b. with an area of 0.80.8?(2020mm) mounted on 0.050.05?(1.31.3mm) solder pad. 2 . on glass epoxy p.c.b. mouted on 0.050.05?(1.31.3mm) pads. a 10 case : molded plastic mounting position : any marking : type number results in inexpensive product c ) 5 1 . 0 ( 6 0 0 . 0 ) 5 0 . 0 ( 2 0 0 . 0 det ail "a", scale=20/1 0 1 ~ 0 o a ) 5 1 . 0 ( 6 0 0 . 0 ) 5 0 . 0 ( 2 0 0 . 0 0.033(0.85) 0.026(0.65) 0.20(5.1) 0.193(4.9) ) 2 4 . 1 ( 6 5 0 . 0 ) 2 2 . 1 ( 8 4 0 . 0 . x a m ) 0 5 . 1 ( 9 5 0 . 0 0.136(3.45) 0.128(3.25) 0.161(4.1) 0.154(3.9) 0.028(0.7) 0.024(0.6) ) 5 . 4 ( 7 7 1 . 0 ) 3 . 4 ( 9 6 1 . 0 ) 4 . 6 ( 2 5 2 . 0 ) 0 . 6 ( 6 3 2 . 0 ) 5 2 . 0 ( 0 1 0 . 0 ) 5 1 . 0 ( 6 0 0 . 0 0.028(0.7) 0.012(0.3) abs1 uni t ABS2 abs4 abs6 abs8 abs10 -on glass-epoxy p.c.b. -on aluminum substrate 1 .0 0.95
abs1 thru abs10 ra tings and characteristic cur ves fig.1- maximum for w ard current dera ting cur ve 60 160 140 100 80 20 r o f e g a r e v a t n e r r u c d r a w ) a ( . 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 120 sin alumina substra t e 50.8mmx50.8mm soldering land 1mmx1mm conduct o r l a yer 2 0 m m substra t e thickness 0.64mm fig.5- typical for w ard characteristics r o f s u o e n a t n a t s n i t n e r r u c d r a w ) a ( . 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 for w ard vol t age. (v) 10 1 0.1 number of cycles (cycle) fig.3- maximum non-repetitive for w ard surge current 1 100 10 r o f k a e p t n e r r u c e g r u s d r a w ) a ( . 35 30 25 20 15 10 5 0 t a=40 c single half sine-w ave (jedec method) 1 cycle 10ms 10ms i fsm non-repetitive, sine w a ve, tj=25 c before surge current is applied o fig.4- typical junction cap acit ance 1 2 5 10 20 800 100 1000 600 500 400 300 200 100 0 reverse vol t age. (v) 200 500 p a c n o i t c n u j ) f p ( . e c n a t i c a tj=25 c 0 50 0.1 0.5 fig.2- typical reverse characteristics per bridge element 0 20 40 60 80 100 120 140 100 0.01 0.1 1 10 percent of ra ted peak reverse vol t age. (%) tj=100 c 0 t n e r r u c e s r e v e r s u o e n a t n a t s n i ) a ( . tj=25 c 0 tj=75 c 0


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